Education

Ph.D., Solid State Physics
Purdue University

M.S., Experimental Physics
Purdue University

B.S., Physics and Applied Math
Purdue University

Contact Information

Email
Website
615-322-2498
254 Featheringill Hall
VU Mailbox: PMB 350092, Nashville, TN 37235-0092 USA


Daniel Fleetwood

Professor of Electrical Engineering
Olin H. Landreth Professor of Engineering
Chair, Department of Electrical Engineering and Computer Science
Professor of Physics


Electrical Engineering and Computer Science


Intellectual Neighborhoods

Research Focus

Effects of ionizing radiation on microelectronic devices & materials. Origin(s) of 1/f noise in semiconductors, semiconductor devices, and metals. Thermally stimulated current methods to profile defects in insulators. Radiation hardness assurance test methods. Charge trapping in silicon dioxide, and interface-trap generation. Radiation effects modeling and simulation. Novel microelectronic materials, including silicon-on-insulator materials. Electronics for high-radiation and high-temperature environments. Advanced microelectronic processing/characterization, including ultrathin oxides & alternative dielectrics. 

Academic Appointments

1999 - Present
Professor of Electrical Engineering, Department of Electrical Engineering and Computer Science, Vanderbilt University (1999 - )   Professor of Physics (2000 - )   Associate Dean for Research of the School of Engineering (2001 - 2003)   Chairman,  Department of Electrical Engineering and Computer Science (2003 - )   Olin H. Landreth Chair in Engineering (2009 - )    

Memberships & Activities

Fellow, IEEE

Fellow, The American Physical Society

Chairman, IEEE NPSS Radiation Effects Committee

Former Chair (2005), APS Forum on Industrial and Applied Physics

Sigma Pi Sigma, Phi Beta Kappa

International Correspondence Chess GrandMaster

Awards & Honors

IEEE Nuclear and Plasma Sciences Society’s Merit Award, 2009

Purdue University, Distinguished Science Alumnus, 2007.

Discover Magazine (1998), R&D Magazine R&D 100 (1997) and Industry Week Technology of Year (1997) Awards, for co-invention of protonic nonvolatile field effect transistor memory (patent issued 11/3/1998).

More than 20 Outstanding/Meritorious Conference Paper Awards for IEEE Conferences on Nuclear and Space Radiation Effects and Conferences on Hardened Electronics and Radiation Technology.

Distinguished Member of the Technical Staff, Sandia National Laboratories, 1990-1999.

Biography

Daniel M. Fleetwood received his B. S., M. S., and Ph. D. degrees in Physics from Purdue University in 1980, 1981, and 1984. Dan joined Sandia National Laboratories in Albuquerque, New Mexico, in 1984, and was named a Distinguished Member of the Technical Staff in the Radiation Technology and Assurance Department in 1990. In 1999 he left Sandia to accept the position of Professor of Electrical Engineering at Vanderbilt University in Nashville, Tennessee. In 2000, he was also named a Professor of Physics, in 2001 he was appointed Associate Dean for Research of the Vanderbilt School of Engineering, and in 2003 he was named Chair of the Electrical Engineering and Computer Science Department. Dan is the author of nearly 500 publications on radiation effects in microelectronics, ten of which have been recognized with Outstanding Paper Awards. These papers have been cited more than 13,000 times (citation h factor = 64, Google Scholar). In 2009, he received the IEEE Nuclear and Plasma Sciences Society’s Merit Award, which is the society’s highest individual technical honor. Dan is a Fellow of both the Institute for Electrical and Electronics Engineers and The American Physical Society, and a member of ASEE, Phi Beta Kappa, and Sigma Pi Sigma.


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