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Daniel Fleetwood

Olin H. Landreth Professor of Engineering
Professor of Electrical Engineering
Professor of Physics

Electrical and Computer Engineering

Intellectual Neighborhoods

Research Focus

Effects of ionizing radiation on microelectronic devices & materials. Origin(s) of 1/f noise in semiconductors, semiconductor devices, and metals. Thermally stimulated current methods to profile defects in insulators. Radiation hardness assurance test methods. Charge trapping in silicon dioxide, and interface-trap generation. Radiation effects modeling and simulation. Novel microelectronic materials, including silicon-on-insulator materials. Electronics for high-radiation and high-temperature environments. Advanced microelectronic processing/characterization, including ultrathin oxides & alternative dielectrics. 

Academic Appointments

1999 - Present
Professor of Electrical Engineering, Department of Electrical Engineering and Computer Science, Vanderbilt University (1999 - )   Professor of Physics (2000 - )   Associate Dean for Research of the School of Engineering (2001 - 2003)   Chairman,  Department of Electrical Engineering and Computer Science (2003 - 2020)   Olin H. Landreth Chair in Engineering (2009 - )    

Memberships & Activities

Fellow, IEEE

Fellow, The American Physical Society

Fellow, American Association for the Advancement of Science

Senior Editor, Radiation Effects, IEEE Transactions on Nuclear Science

Distinguished Lecturers Chair, IEEE NPSS Adcom

Former Chair (2005), APS Forum on Industrial and Applied Physics

Sigma Pi Sigma, Phi Beta Kappa

International Correspondence Chess GrandMaster

Awards & Honors

IEEE Nuclear and Plasma Sciences Society’s Merit Award, 2009

Purdue University, Distinguished Science Alumnus, 2007.

Discover Magazine (1998), R&D Magazine R&D 100 (1997) and Industry Week Technology of Year (1997) Awards, for co-invention of protonic nonvolatile field effect transistor memory (patent issued 11/3/1998).

More than 25 Outstanding/Meritorious Conference Paper Awards for IEEE Conferences on Nuclear and Space Radiation Effects and Conferences on Hardened Electronics and Radiation Technology.

Distinguished Member of the Technical Staff, Sandia National Laboratories, 1990-1999.


Daniel M. Fleetwood received his B. S., M. S., and Ph. D. degrees in Physics from Purdue University in 1980, 1981, and 1984. Dan joined Sandia National Laboratories in Albuquerque, New Mexico, in 1984, and was named a Distinguished Member of the Technical Staff in the Radiation Technology and Assurance Department in 1990. In 1999 he accepted a position as Professor of Electrical Engineering at Vanderbilt University in Nashville, Tennessee. In 2000, he was also named a Professor of Physics, in 2001 he was appointed Associate Dean for Research of the Vanderbilt School of Engineering, and from 2003-2020 he was Chair of the Electrical Engineering and Computer Science Department. Dan is the author of more than 500 publications on radiation effects in microelectronics, 12 of which have been recognized with Outstanding Paper Awards. These papers have been cited more than 25,000 times (citation h factor = 87, Google Scholar). In 2009, he received the IEEE Nuclear and Plasma Sciences Society’s Merit Award, which is the society’s highest individual technical honor. He currently serves as Senior Editor, Radiation Effects, for the IEEE Transactions on Nuclear Science, and Distinguished Lecturers Chair for the IEEE Nuclear and Plasma Sciences Society. Dan is a Fellow of the Institute for Electrical and Electronics Engineers, The American Physical Society, the American Association for the Advancement of Science, and a member of ASEE, Phi Beta Kappa, and Sigma Pi Sigma.