Research Professor of Electrical Engineering
Associate Director, Institute for Space and Defense Electronics (ISDE)
Application of advanced and emerging semiconductor technologies in radiation environments, modeling and simulation of radiation effects in semiconductor devices and circuits, and workforce development
Dr. Michael Alles received his Ph.D. (12/92), M.S. (8/90), and B.S. (5/87) degrees in Electrical Engineering from Vanderbilt University. Dr. Alles is a Research Professor of Electrical Engineering, and the Associate Director of the Vanderbilt Institute for Space and Defense Electronics (ISDE). Prior to returning to Vanderbilt to join ISDE, he spent 12 years in the semiconductor industry working in silicon-in-insulator (SOI) technology development, manufacturing, metrology, computer aided design tools for semiconductor fabrication processes, semiconductor device physics, and integrated circuit design. In addition to his technical expertise, Dr. Alles has business and program management experience including having participated in 2 public offerings. Dr. Alles has served on the SIA ITRS starting materials working group including chairing the SOI materials group for the 2001 revision, the IEEE SOI/S3S conference technical committee, and has been a reviewer for Transactions on Nuclear Science and a short course instructor for NSREC (Radiation Hardening by Process) and IRPS (Radiation Effects on Advanced bulk, FinFET and SOI CMOS Technologies). He is a member of IEEE EDS and NPSS, and has over 220 publications and 2 patents.